Quenching of the Quantum Hall Effect in Multilayered Epitaxial Graphene: The Role of Undoped Planes

Phys. Rev. Lett. 101, 116806 – Published 10 September 2008
Pierre Darancet, Nicolas Wipf, Claire Berger, Walt A. de Heer, and Didier Mayou

Abstract

We propose a mechanism for the quenching of the Shubnikov–de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, i.e., it can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene n=0 Landau level of the uncharged layers which is pinned at the Fermi level. We find that the coupling between this n=0 Landau level and the conducting states of the doped plane leads to a scattering mechanism having the right magnitude to explain the experimental data.

DOI: http://dx.doi.org/10.1103/PhysRevLett.101.116806

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  • Received 8 November 2007
  • Published 10 September 2008

© 2008 The American Physical Society

Authors & Affiliations

Pierre Darancet1, Nicolas Wipf1, Claire Berger1,2, Walt A. de Heer2, and Didier Mayou1

  • 1Institut Néel, CNRS/UJF, 25 rue des Martyrs BP166, 38042 Grenoble Cedex 9, France
  • 2School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

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